Electronic and structural properties of a twin boundary in Si

Abstract

A second-order twin boundary in Si, of the 9 type, is investigated with first-principles density-functional theory and with an empirical tight-binding model. Of two proposed reconstructions studied, the one supported by recent experiment is energetically favored, with less bond stretching than the other. A conduction-band-edge interface electronic state associated with bond-angle strains is found. A phonon resonance, the interfacial analog of a Rayleigh mode, is predicted; Raman spectroscopy should be able to detect it. © 1986 The American Physical Society.