Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The instrumental requirements, spectral processing and interpretation for spatially resolved electron energy loss scattering appropriate for electronic structure determinations are reviewed. As an example, the recent Si L2, 3 absorption spectra obtained with 0.2 eV resolution in GeSi alloy layers 5-50 nm thick are discussed. © 1992.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A. Reisman, M. Berkenblit, et al.
JES
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
M.A. Lutz, R.M. Feenstra, et al.
Surface Science