Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The instrumental requirements, spectral processing and interpretation for spatially resolved electron energy loss scattering appropriate for electronic structure determinations are reviewed. As an example, the recent Si L2, 3 absorption spectra obtained with 0.2 eV resolution in GeSi alloy layers 5-50 nm thick are discussed. © 1992.
T.N. Morgan
Semiconductor Science and Technology
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