Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The electronic structure of metal-semiconductor (or insulator) interfaces is studied using the self-consistent pseudopotential method. The metal is simulated by a jellium model for the positive background with a charge density equivalent to than of aluminum. For the metal-Ge(111) interface, a high density of metal-induced gap states is found which p ns the Fermi level. These states are free-electron-like in the jellium and decay exponentially into the Ge. The calculated Schottky-barrier height is 0.55 eV and the index of interface behavior S is 0.14, in agreement with experiment. The behavior of the diamond Schottky barrier is crucial in the theory of Schottky barriers because of its large gap and zero ionicity. For the metal-diamond interface, the density of metal-induced gap states is found to be smaller than in the case of Ge. Predictions based on experimental extrapolations give S=0. Our calculations give S=0.4. We obtained a barrier height of 2.2 eV, in agreement with experiment. The theory of the Schottky barrier is discussed using present results. © 1978 The American Physical Society.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
E. Burstein
Ferroelectrics