B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
This paper discusses the electrostatic discharge (ESD) robustness in silicon-on-insulator (SOI) high-pin-count high-performance semiconductor chips. The ESD results demonstrate that sufficient ESD protection levels are achievable in SOI microprocessors using lateral ESD SOI polysilicon-bound gated diodes without the need for additional masking steps, process implants or ESD design area. © 2000 Elsevier Science B.V.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
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