Transmission line pulse picosecond imaging circuit analysis methodology for evaluation of ESD and latch up
- Alan Weger
- Steven Voldman
- et al.
- 2003
- IRPS 2003
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16 results for Steven H. Voldman
Transmission line pulse picosecond imaging circuit analysis methodology for evaluation of ESD and latchup
- Alan Weger
- Steven Voldman
- et al.
- 2003
- IRPS 2003
Foundation of rf CMOS and SiGe BiCMOS technologies
- James S. Dunn
- David C. Ahlgren
- et al.
- 2003
- IBM J. Res. Dev
Test methods, test techniques and failure criteria for evaluation of ESD degradation of analog and radio frequency (RF) technology
- Steven H. Voldman
- Brian Ronan
- et al.
- 2002
- EOS/ESD 2002
Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry
- S. Voldman
- D. Hui
- et al.
- 2002
- Journal of Electrostatics
Silicon Germanium heterojunction bipolar transistor ESD power clamps and the Johnson Limit
- Steven H. Voldman
- Alan Botula
- et al.
- 2001
- EOS/ESD 2001
Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry
- S. Voldman
- D. Hui
- et al.
- 2000
- EOS/ESD 2000
Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
- S. Voldman
- P. Juliano
- et al.
- 2000
- EOS/ESD 2000
Electrostatic discharge (ESD) protection in silicon-on-insulator (SOI) CMOS technology with aluminum and copper interconnects in advanced microprocessor semiconductor chips
- S. Voldman
- D. Hui
- et al.
- 2000
- Journal of Electrostatics
Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
- S. Voldman
- P. Juliano
- et al.
- 2000
- Annual Proceedings - Reliability Physics (Symposium)