M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Interstitial dislocation loops present in shallow junctions formed following Ge preamorphization (85 keV, 1Χ1015 cm-2) and rapid thermal annealing have been eliminated using titanium silicide. The dissolution of these end-of-range defects is attributed to the injection of vacancies during silicidation. The size and number of the residual extended defects were reduced in both p+ and n+ junctions after the formation of TiSi2. The silicide sheet resistance is a measure of the amount of silicide reaction and concomitant vacancy injection. The total elimination of these defects was observed in shallow p+junctions for sheet resistance of TiSi2 below 3Ω/▭. Leakage current reduction in silicided p+/n junctions, was correlated with the defect reduction. © 1989, The Electrochemical Society, Inc. All rights reserved.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
T.N. Morgan
Semiconductor Science and Technology