J.M. Amatya, H. Heinrich, et al.
Journal of Applied Physics
Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock.We report a single-walled carbon nanotube (SWNT) transistor technology with an end-bonded contact scheme that leads to sizeindependent contact resistance to overcome the scaling limits of conventional side-bonded or planar contact schemes. A high-performance SWNT transistor was fabricated with a sub-10-nanometer contact length, showing a device resistance below 36 kilohms and oncurrent above 15 microampere per tube. The p-type end-bonded contact, formed through the reaction of molybdenum with the SWNT to form carbide, also exhibited no Schottky barrier.This strategy promises high-performance SWNT transistors, enabling future ultimately scaled device technologies.
J.M. Amatya, H. Heinrich, et al.
Journal of Applied Physics
Zhaoying Hu, Shu Jen Han
HOST 2017
Qing Cao, Jerry Tersoff, et al.
Physical Review Applied
Changxi Zheng, K. Hannikainen, et al.
Physical Review Materials