In-situ characterization of ultrathin nickel silicides using 3D medium-energy ion scattering
- Tuan T. Tran
- Lukas Jablonka
- et al.
- 2020
- Scientific Reports
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35 results for Zhen Zhang
Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors
- Qitao Hu
- Si Chen
- et al.
- 2021
- Science Advances
Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate
- Yingtao Yu
- Si Chen
- et al.
- 2021
- IEEE Electron Device Letters
Effects of Substrate Bias on Low-Frequency Noise in Lateral Bipolar Transistors Fabricated on Silicon-on-Insulator Substrate
- Qitao Hu
- Si Chen
- et al.
- 2020
- IEEE Electron Device Letters
Rectification of protein translocation in truncated pyramidal nanopores
- Shuangshuang Zeng
- Chenyu Wen
- et al.
- 2019
- Nature Nanotechnology
End-bonded contacts for carbon nanotube transistors with low, size-independent resistance
- Qing Cao
- Shu Jen Han
- et al.
- 2015
- Science
Dopant-segregation technique for leakage reduction and performance improvement in trigate transistors without raised source/drain epitaxy
- Fei Liu
- Zhen Zhang
- et al.
- 2014
- IEEE Electron Device Letters
Ultra low contact resistivities for CMOS beyond 10-nm node
- Zhen Zhang
- Siyuranga Obasa Koswatta
- et al.
- 2013
- IEEE Electron Device Letters
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters