R.D. Thompson, M. Eizenberg, et al.
Journal of Applied Physics
A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1-xAs heterojunctions. We have found for x<0.4 that Δ Ec≅0.62 Δ Eg, where Δ Eg is the band-gap difference. For x>0.4, the apparent Δ Ec is considerably smaller.
R.D. Thompson, M. Eizenberg, et al.
Journal of Applied Physics
M. Eizenberg, M. Heiblum, et al.
Journal of Applied Physics
M. Heiblum, M.I. Nathan, et al.
Solid-State Electronics
K. Iiraslau, M.I. Nathan
IEEE T-ED