J.R. Lloyd, R.H. Koch
Journal of Applied Physics
Metal-oxide-silicon field-effect transistors (MOSFET's) were fabricated with Na+ ions in the gate oxide. Large peaks in the tunneling conductivity through the oxide were observed which are interpreted as resonant tunneling of electrons through localized Na+ impurities. It was demonstrated that the tunneling current was spatially localized. The temperature dependence of several peaks was measured and found to be consistent with a simple model for resonant tunneling through localized states. The position of the state in the direction of tunneling can be determined from the temperature dependence. © 1985 The American Physical Society.
J.R. Lloyd, R.H. Koch
Journal of Applied Physics
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IBM J. Res. Dev
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