K. Ismail, M. Arafa, et al.
Applied Physics Letters
Silicon nitride films have been prepared by excimer laser photolysis of ammonia/silane or ammonia/disilane mixtures at temperatures in the range 225-625°C in a hot-walled low-pressure reactor. The highest-quality films, deposited at 225°C, have high breakdown-field strength, Ebd=8.8 Mv cm-1, low midgap interface-state-trap densities, N it=1.7×1011 eV-1 cm-2, and a dielectric constant of ε=4.8.
K. Ismail, M. Arafa, et al.
Applied Physics Letters
J.M. Jasinski
MRS Fall Meeting 1993
S. Voldman, P. Juliano, et al.
EOS/ESD 2000
D.B. Beach, J.M. Jasinski
Journal of Physical Chemistry