S. Nelson, K. Ismail, et al.
Applied Physics Letters
Silicon nitride films have been prepared by excimer laser photolysis of ammonia/silane or ammonia/disilane mixtures at temperatures in the range 225-625°C in a hot-walled low-pressure reactor. The highest-quality films, deposited at 225°C, have high breakdown-field strength, Ebd=8.8 Mv cm-1, low midgap interface-state-trap densities, N it=1.7×1011 eV-1 cm-2, and a dielectric constant of ε=4.8.
S. Nelson, K. Ismail, et al.
Applied Physics Letters
T.N. Jackson, S. Nelson, et al.
IEEE Transactions on Electron Devices
R. Schulz, M. Jost, et al.
VLSI Technology 1989
R.A. Kiehl, P.E. Batson, et al.
Physical Review B