Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
In this paper, we will briefly review the growth of Si/SiGe quantum wells and the effect of strain on the bandstructure. Enhanced electron/hole transport properties in such layers will be demonstrated, and their application in electronic devices such as P and N modulation-doped field-effect transistors (MODFET) will be discussed. At the circuit level, the use of these devices in a complimentary metal-oxide-semiconductor (CMOS) circuit implementation will be considered. © 1995 Chapman & Hall.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Peter J. Price
Surface Science
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990