J.A. Barker, D. Henderson, et al.
Molecular Physics
In this paper, we will briefly review the growth of Si/SiGe quantum wells and the effect of strain on the bandstructure. Enhanced electron/hole transport properties in such layers will be demonstrated, and their application in electronic devices such as P and N modulation-doped field-effect transistors (MODFET) will be discussed. At the circuit level, the use of these devices in a complimentary metal-oxide-semiconductor (CMOS) circuit implementation will be considered. © 1995 Chapman & Hall.
J.A. Barker, D. Henderson, et al.
Molecular Physics
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Physical Review B
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Surface Science
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