G.W. Rubloff, M. Offenberg, et al.
IEEE Trans Semicond Manuf
Positive charge and surface states are found to accumulate at the Si-SiO2 interface in MOS structures which are illuminated by vacuum ultraviolet photons (≳9 eV) with a negative bias applied to the metal electrode. A series of experiments seems to rule out the obvious explanations for this effect - photon and hot-electron processes. We suggest the possibility that excitons, generated by photon absorption in the SiO2, diffuse to the Si-SiO2 interface where they are separated into a free electron absorbed into the silicon substrate and a hole trapped at the interface.
G.W. Rubloff, M. Offenberg, et al.
IEEE Trans Semicond Manuf
R. Blitz, G.W. Rubloff, et al.
JVSTA
A. Hartstein, Z.A. Weinberg, et al.
Physical Review B
K. Hofmann, G.W. Rubloff, et al.
Journal of Applied Physics