J.G. Clabes, G.W. Rubloff, et al.
Physical Review B
Positive charge and surface states are found to accumulate at the Si-SiO2 interface in MOS structures which are illuminated by vacuum ultraviolet photons (≳9 eV) with a negative bias applied to the metal electrode. A series of experiments seems to rule out the obvious explanations for this effect - photon and hot-electron processes. We suggest the possibility that excitons, generated by photon absorption in the SiO2, diffuse to the Si-SiO2 interface where they are separated into a free electron absorbed into the silicon substrate and a hole trapped at the interface.
J.G. Clabes, G.W. Rubloff, et al.
Physical Review B
P.S. Ho, G.W. Rubloff
Thin Solid Films
T.C. Leung, Z.A. Weinberg, et al.
Journal of Applied Physics
G.W. Rubloff, H. Lüth, et al.
Journal of Catalysis