Pedro André Martins Bezerra, R.K. Aljameh, et al.
COMPEL 2017
Different Half-Bridge (HB) converter topologies for an Integrated Voltage Regulator (IVR), which serves as a microprocessor application, were evaluated. The HB circuits were implemented with Stacked Transistors (HBSTs) in a cutting-edge 14 nm CMOS technology node in order to enable the integration on the microprocessor die. Compared to a conventional realization of the HBST, it was found that the Active Neutral-Point Clamped (ANPC) HBST topology with Independent Clamp Switches (ICSs) not only ensured balanced blocking voltages across the series-connected transistors, but also featured a more robust operation and achieved higher efficiencies at high output currents. The IVR achieved a maximum efficiency of 85.3% at an output current of 300 mA and a switching frequency of 50 MHz. At the maximum measured output current of 780 mA, the efficiency was 83.1%. The active part of the IVR (power switches, gate-drivers, and level shifters) realized a high maximum current density of 24.7 A/mm2 .
Pedro André Martins Bezerra, R.K. Aljameh, et al.
COMPEL 2017
Thomas Brunschwiler, Gerd Schlottig, et al.
Pan Pacific 2017
Thomas Brunschwiler, Gerd Schlottig, et al.
IEDM 2017
Toke M. Andersen, Florian Krismer, et al.
IEEE-TEPL