A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
We report a study of the effects of large, external uniaxial stress (T) along [001] and [110] on the optical properties of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well. For T [110] we have observed a red shift of several peaks and an increase in the intensities of several symmetry-forbidden transitions; effects not seen for T [100]. This phenomenon is due to an electric field along [001] induced by the piezoelectric coupling for T [110]. © 1991 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS