J.H. Stathis, R. Bolam, et al.
INFOS 2005
We report a study of the effects of large, external uniaxial stress (T) along [001] and [110] on the optical properties of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well. For T [110] we have observed a red shift of several peaks and an increase in the intensities of several symmetry-forbidden transitions; effects not seen for T [100]. This phenomenon is due to an electric field along [001] induced by the piezoelectric coupling for T [110]. © 1991 The American Physical Society.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures