Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1992
- Physical Review B
Publications
7 results for C. Mailhiot
Uniaxial stress study of the quantum transitions in a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
- H. Qiang
- Fred H. Pollak
- et al.
- 1992
- Surface Science
Externally generated piezoelectric effect in semiconductor micro- structures
- H. Qiang
- Fred H. Pollak
- et al.
- 1991
- Physical Review B
Field-effect transistor structure based on strain-induced polarization charges
- T.F. Kuech
- R.T. Collins
- et al.
- 1990
- Journal of Applied Physics
interface states and Schottky barrier formation at metal/GaAs junctions
- R.E. Viturrc
- C. Mailhiot
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Band bending and interface states for metals on GaAs
- R.E. Viturro
- J.L. Shaw
- et al.
- 1988
- Applied Physics Letters
Electronic properties of quantum wells in perturbing fields
- R.T. Collins
- L. Vina
- et al.
- 1989
- Proceedings of SPIE 1989