John G. Long, Peter C. Searson, et al.
JES
Fully functional 512Kb static-random access memory (SRAM) devices containing more than 3.6 million transistors have been successfully fabricated in a 0.25 μm complementary metal oxide semiconductor (CMOS) technology using compact storage ring X-ray lithography thus demonstrating the functionality of the X-ray lithography infrastructure. A lithographic performance comparison was made between x-ray lithography and optical (excimer laser) lithography by fabricating SRAM devices using both lithographic techniques. The excellent process latitude and dimension control available for x-ray lithography is reflected in this comparison. A comprehensive discussion of the advantages of x-ray lithography is discussed in this paper. © 1994.
John G. Long, Peter C. Searson, et al.
JES
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
R.W. Gammon, E. Courtens, et al.
Physical Review B