22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
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85 results for Karen Petrillo
HIGHLY LATCHUP-IMMUNE 1- mu m CMOS TECHNOLOGY FABRICATED WITH 1 Mev ION IMPLANTATION AND SELF-ALIGNED TiSi//2.
- F.S. Lai
- L.K. Wang
- et al.
- 1984
- IEDM 1984
Advanced EUV Resist Characterization using Scatterometry and Machine Learning
- Daniel Schmidt
- Karen Petrillo
- et al.
- 2021
- ASMC 2021
EUV single exposure via patterning at aggressive pitch
- Jing Guo
- Jennifer Church
- et al.
- 2021
- SPIE Advanced Lithography 2021
Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features
- A. Dutta
- Jennifer Church
- et al.
- 2020
- SPIE Advanced Lithography 2020
Fundamental characterization of stochastic variation for improved single-expose EUV patterning at aggressive pitch
- Jennifer Church
- Luciana Meli
- et al.
- 2020
- SPIE Advanced Lithography 2020
Line top loss and line top roughness characterizations of EUV resists
- Daniel Schmidt
- Karen Petrillo
- et al.
- 2020
- SPIE Advanced Lithography 2020
Material and process improvements towards sub 36nm pitch EUV single exposure
- Karen Petrillo
- Dave Hetzer
- et al.
- 2019
- ANTS 2019
The defect mitigation on EUV stack by track based technology
- Naoki Shibata
- Lior Huli
- et al.
- 2019
- SPIE Advanced Lithography 2019
Track based techniques to improve high-resolution EUV patterning defectivity
- Naoki Shibata
- Lior Huli
- et al.
- 2018
- EUVL 2018