PaperEvidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayersS.J. Koester, E.W. Kiewra, et al.Applied Physics Letters
PaperInfluence of surfactants in Ge and Si epitaxy on Si(001)M. Copel, M.C. Reuter, et al.Physical Review B
PaperTexture transformations in reactive metal films deposited upon amorphous substratesD. Dunn, R. Hull, et al.Journal of Applied Physics
PaperMedium-energy-ion-scattering investigations of Si and Ge growth on GaAs(001)-c(2×8)/(2×4)J. Falta, M. Copel, et al.Physical Review B