Icko Eric Timothy Iben
EOS/ESD 2009
Conference paper
FET protection of GMR and TMR sensors
Abstract
TMR and GMR sensors used for reading data written on magnetic media can be damaged by ns wide pulses below 1 Volt. Since diodes turn on around 1 V, they offer little ESD protection. This paper explores the use of diode-connected FETs to protect MR sensors below 1 V.
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