A 0.35 μm SiGe BiCMOS technology for power amplifier applications

Abstract

In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm lithography node with 3.3 V / 5.0 V dualgate CMOS technology and high-quality passives on a 50 Ω.cm substrate. © 2007 IEEE.