Fine pitch transfer and join (T&J) from MCM to 3DI

Abstract

Over the last three decades computational performance propelled forward at a breath taking pace. This was enabled due to the introduction of CMOS technology, strict application of its scaling rules, and system innovation. The industry followed "Moore's Law" doubling transistor count every 18 month. In addition the design community drove innovations like on-chip caching, pipelined executions, and multi-core systems to deliver the required performance. All this time the processor chip could be considered to be flat which put increasing pressure on chip size to accommodate all its components. To continue the performance trend, however, it is conceivable to spread the components of the microprocessor chip over more than one active layer to maintain their close proximity. The device 3D integration (3DI) has the potential to achieve such goals to the next level. 3DI can be visualized as vertically stacked multi-chip-modules (MCM-D) with through-Si-via (TSV) integrated with all Si devices. The fine pitch transfer join (TJ) technology is well developed and suited for such integrations. This paper will review the evolution of the TJ technology in fine pitch device connection from it's early MCM applications to the more recent all-Si fine pitch 300 mm wafer-level connections. ©The Electrochemical Society.