Floating-island TFT leakage caused by process step reduction

Abstract

The leakage mechanism for a top-gate thin-film transistor (TFT) was analyzed to achieve a high-contrast liquid crystal display (LCD). The OFF and ON channel lengths were defined using a T-shaped TFT structure to reduce leakage without ON current decrease. The analysis showed that OFF state leakage in the top-gate TFT was caused by the existence of floating-island.