Improved Air Spacer for Highly Scaled CMOS Technology
- Kangguo Cheng
- Chanro Park
- et al.
- 2020
- IEEE Transactions on Electron Devices
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TCAD/physics-based analysis of high-density dual-BOX FD/SOI SRAM cell with improved stability
- Keunwoo Kim
- Jente B. Kuang
- et al.
- 2009
- IEEE Transactions on Electron Devices
Band-edge high-performance metal-gate/high-κ nMOSFET using Hf-Si/HfO 2 stack
- Takashi Ando
- Tomoyuki Hirano
- et al.
- 2009
- IEEE Transactions on Electron Devices
Impact of lateral asymmetric channel doping on 45-nm-technology N-Type SOI MOSFETs
- Hasan M. Nayfeh
- Nivo Rovedo
- et al.
- 2009
- IEEE Transactions on Electron Devices
Measurement of subnanosecond delay through multiwall carbon-nanotube local interconnects in a CMOS integrated circuit
- Gael F. Close
- Shinichi Yasuda
- et al.
- 2009
- IEEE Transactions on Electron Devices
Undoped-body extremely thin SOI MOSFETs with back gates
- Amlan Majumdar
- Zhibin Ren
- et al.
- 2009
- IEEE Transactions on Electron Devices
Modeling and analysis of parasitic resistance in double-gate FinFETs
- Daniel Tekleab
- S. Samavedam
- et al.
- 2009
- IEEE Transactions on Electron Devices
A simple semiempirical short-channel MOSFET current-voltage model continuous across all regions of operation and employing only physical parameters
- Ali Khakifirooz
- Osama M. Nayfeh
- et al.
- 2009
- IEEE Transactions on Electron Devices
On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds
- Jiahui Yuan
- John D. Cressler
- et al.
- 2009
- IEEE Transactions on Electron Devices
Performance-aware corner model for design for manufacturing
- Chung-Hsun Lin
- Mohan V. Dunga
- et al.
- 2009
- IEEE Transactions on Electron Devices