M. Matsuura, R. Petkie, et al.
Materials Science and Engineering: A
It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.
M. Matsuura, R. Petkie, et al.
Materials Science and Engineering: A
G. Ottaviani, K.N. Tu, et al.
Applied Physics Letters
H.K. Liou, X. Wu, et al.
Applied Physics Letters
S.S. Lau, J.W. Mayer, et al.
Journal of Applied Physics