Y. Hsu, T. Standaert, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
We have observed fractional quantization of very few electrons confined in a semiconductor quantum dot using capacitance spectroscopy. The number of electrons per dot varies from 0 to about 40 as a function of bias on the quantum capacitors. The capacitance spectra have clear minima at gate voltages and magnetic fields, where the filling factors are 1/3 and 2/3. These measurements may allow direct comparison with few-particle calculations.
Y. Hsu, T. Standaert, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J. Liu, W.X. Gao, et al.
Physical Review B
T.P. Smith III, W.I. Wang, et al.
Surface Science
T.H.P. Chang, M.G.R. Thomson, et al.
Microelectronic Engineering