Sung Ho Kim, Oun-Ho Park, et al.
Small
Using high-resolution medium-energy ion scattering, we have determined the surface As and Ga coverages of the c(4×4), c(2×8), (2×4), (2×6), and c(8×2) reconstructions of GaAs(001). All surfaces are more Ga rich than predicted by current structural models. The results are explained in terms of charge neutrality and Coulomb repulsion between As lone-pair orbitals, leading to As replacement by Ga in the first and second surface layers. © 1993 The American Physical Society.
Sung Ho Kim, Oun-Ho Park, et al.
Small
R. Ghez, M.B. Small
JES
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007