GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy

S. Guha; N.A. Bojarczuk

doi:10.1049/el:19971312

Electronics Letters

Paper

06 Nov 1997

GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy

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Abstract

The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 in the current injection range of 20-65 A/cm2 at 5-7.5 volts.

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