M. Copel, E. Cartier, et al.
Applied Physics Letters
The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 in the current injection range of 20-65 A/cm2 at 5-7.5 volts.
M. Copel, E. Cartier, et al.
Applied Physics Letters
V. Narayanan, S. Guha, et al.
MRS Proceedings 2002
V. Narayanan, V.K. Paruchuri, et al.
VLSI Technology 2006
K.-L. Lee, M.M. Frank, et al.
VLSI Technology 2006