Zuhair A. Munir, G. Bryan Street, et al.
The Journal of Chemical Physics
The concentration of argon in sputtered nickel films has been obtained as a function of the film-growth temperature, the discharge pressure, and of the energy (bias voltage) with which the argon ions bombard the growing film. The concentrations vary from about 10-1 argon atoms/Ni atom to 10 -4 argon atoms/Ni atom, depending upon the conditions during film growth. The incorporation of both argon and nitrogen into nickel films is interpreted on the basis of results previously obtained from sorption studies in a more-idealized system on a pre-existing nickel surface. © 1967 The American Institute of Physics.
Zuhair A. Munir, G. Bryan Street, et al.
The Journal of Chemical Physics
Eric Kay, R.A. Sigsbee, et al.
Applied Physics Letters
Harold F. Winters, F.A. Houle
Journal of Applied Physics
U. Hetzler, Eric Kay
Journal of Applied Physics