E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
The growth and subsequent electrochemical oxygen intercalation of c-axis La2CuO4+δ thin films on substrates with different lattice mismatch [SrTiO3 (001) (+3.03%), NdGaO3 (001) (+1.90%), LaAIO3 (001) (-0.05%) and SrLaAIO4 (001) (-0.95%) substrates] are compared. The films grown on the different substrates can all be oxidized electrochemically, but their structural and transport properties differ vastly. The results can roughly be divided into two categories, i.e., those of films grown with a compressive or a tensile lattice mismatch where the former have a larger c-axis lattice parameter and better transport properties.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
T.N. Morgan
Semiconductor Science and Technology
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Hiroshi Ito, Reinhold Schwalm
JES