Control of interfacial structure and electrical properties in MBE grown single crystalline SrTiO3 gate dielectrics on Si(100)
- Gerd Norga
- Chiara Marchiori
- et al.
- 2006
- MRS Spring Meeting 2006
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92 results for J.P. Locquet
Electrochemical modification of La2CuO4: The role played by microstructure
- E.J. Williams
- A. Daridon
- et al.
- 1996
- MRS Fall Meeting 1996
Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain
- J.P. Locquet
- J. Perret
- et al.
- 1998
- Nature
Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- IEEE Electron Device Letters
Electrostatic modulation of the superfluid density in an ultrathin La2-xSrxCuO4 film
- A. Rüfenacht
- J.P. Locquet
- et al.
- 2006
- Physical Review Letters
Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins
- F. Nolting
- A. Scholl
- et al.
- 2000
- Nature
Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance
- Pablo Sanchis
- L. Sánchez
- et al.
- 2014
- ICTON 2014
Epitaxial Dy2O3 thin films grown on Ge(100) substrates by molecular beam epitaxy
- Md. Nurul Kabir Bhuiyan
- Mariela Menghini
- et al.
- 2010
- MRS Online Proceedings Library
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- Yanning Sun
- S.J. Koester
- et al.
- 2007
- CS MANTECH 2007
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006