U. Gösele, T.Y. Tan
Applied Physics A Solids and Surfaces
It is reasonable to assume that the volume increase of about 120% associated with the formation of a SiO2 molecule from a Si atom during thermal oxidation of Si is facilitated by viscoelastic flow of the newly formed SiO2 layer at the SiO2-Si interface. This flow is driven by a compressive plane stress. We propose that it is this stress which gives rise to a supersaturation of Si self-interstitials in the Si crystal, and that consequently the growth kinetics of oxidation-induced stacking faults is determined by the kinetics of the viscoelastic flow of the SiO2.
U. Gösele, T.Y. Tan
Applied Physics A Solids and Surfaces
T.Y. Tan, U. Gösele
Journal of Applied Physics
D. Braunig, K.H. Yang, et al.
physica status solidi (a)
K.N. Tu, G. Ottaviani, et al.
Journal of Applied Physics