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International Symposium on Passivity 1982
Conference paper

GROWTH OF THIN OXIDE LAYERS ON SILICIDE COMPOUNDS.

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Abstract

The first stages of the room temperature oxidation of Ni, Pd and Pt silicides have been studied by ESCA. It is suggested that the observed variations in oxide stoichiometry and oxide thickness are related to the more or less pronounced metallic character of the silicide surface. (Author abstract. )

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Publication

International Symposium on Passivity 1982

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