Hardness assurance testing for proton direct ionization effects
James R. Schwank, Marty R. Shaneyfelt, et al.
RADECS 2011
Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ION-induced current transients are measured using Sandia National Laboratories' microbeam and high- and low-energy broadbeam sources at the Grand Accélérateur National d'Ions Lourds, Caen, France, and the University of Jyväskylä, Finland. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET. © 2009 IEEE.
James R. Schwank, Marty R. Shaneyfelt, et al.
RADECS 2011
James R. Schwank, Marty R. Shaneyfelt, et al.
IEEE TNS
Nathaniel A. Dodds, James R. Schwank, et al.
IEEE TNS
James R. Schwank, Marty R. Shaneyfelt, et al.
IEEE TNS