Demonstration of npn InAs bipolar transistors with inverted base doping
- Paul E. Dodd
- Michael L. Lovejoy
- et al.
- 1996
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
18 results for P.E. Dodd
Hardness assurance testing for proton direct ionization effects
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2011
- RADECS 2011
Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2009
- RADECS 2009
Heavy ion testing at the galactic cosmic ray energy peak
- Jonathan A. Pellish
- Michael A. Xapsos
- et al.
- 2009
- RADECS 2009
Radiation-Induced Charge Trapping in Thin Al2O 3/SiOxNy/Si(100) Gate Dielectric Stacks
- J.A. Felix
- M.R. Shaneyfelt
- et al.
- 2003
- IEEE TNS
InAs bipolar transistors: A path to high-performance cryogenic electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- Device Research Conference 1993
New Insights Gained on Mechanisms of Low-Energy Proton-Induced SEUs by Minimizing Energy Straggle
- N.A. Dodds
- P.E. Dodd
- et al.
- 2015
- IEEE TNS
Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam
- Nathaniel A. Dodds
- James R. Schwank
- et al.
- 2014
- IEEE TNS
Hardness assurance testing for proton direct ionization effects
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2012
- IEEE TNS
Comparison of single and two-photon absorption for laser characterization of single-event upsets in SOI SRAMs
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2011
- IEEE TNS