Demonstration of npn InAs bipolar transistors with inverted base doping
- Paul E. Dodd
- Michael L. Lovejoy
- et al.
- 1996
- IEEE Electron Device Letters
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18 results for P.E. Dodd
Hardness assurance testing for proton direct ionization effects
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2011
- RADECS 2011
Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2009
- RADECS 2009
Heavy ion testing at the galactic cosmic ray energy peak
- Jonathan A. Pellish
- Michael A. Xapsos
- et al.
- 2009
- RADECS 2009
Radiation-Induced Charge Trapping in Thin Al2O 3/SiOxNy/Si(100) Gate Dielectric Stacks
- J.A. Felix
- M.R. Shaneyfelt
- et al.
- 2003
- IEEE TNS
InAs bipolar transistors: A path to high-performance cryogenic electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- Device Research Conference 1993
New Insights Gained on Mechanisms of Low-Energy Proton-Induced SEUs by Minimizing Energy Straggle
- N.A. Dodds
- P.E. Dodd
- et al.
- 2015
- IEEE TNS
Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam
- Nathaniel A. Dodds
- James R. Schwank
- et al.
- 2014
- IEEE TNS
Hardness assurance testing for proton direct ionization effects
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2012
- IEEE TNS
Comparison of single and two-photon absorption for laser characterization of single-event upsets in SOI SRAMs
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2011
- IEEE TNS