M.R. Melloch, J. Woodall, et al.
Annual Review of Materials Science
Nanometer-size arsenic clusters in low-temperature-growth molecular beam epitaxy GaAs provide the basis for a high-density optical storage medium. The material exhibits a large Franz-Keldysch electro-optic effect at room temperature. Charge storage on the clusters and the excitonic electro-optic properties of the material combine to make a low-power high-density photorefractive storage medium. The ultrafast lifetimes of the photogenerated carriers produce excellent spatial resolution during the writing of holographic space-charge gratings. Fringe spacings as small as 0.6 μm can be supported in this material, yielding an optical data density greater than 108 bits/cm2. The saturation intensity is 2 mW/cm2 with a storage time of 2 ms.
M.R. Melloch, J. Woodall, et al.
Annual Review of Materials Science
P.E. Dodd, M.R. Melloch, et al.
IEEE Transactions on Electron Devices
M.R. Melloch, N. Otsuka, et al.
Journal of Applied Physics
Alan C. Warren, J. Woodall, et al.
Physical Review B