High transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu3Ge ohmic contacts
- C.L. Lin
- M.O. Aboelfotoh
- et al.
- 1993
- IEDM 1993
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34 results for M.R. Melloch
Demonstration of npn InAs bipolar transistors with inverted base doping
- Paul E. Dodd
- Michael L. Lovejoy
- et al.
- 1996
- IEEE Electron Device Letters
1.3-μm P-I-N Photodetector using GaAs with As Precipitates (Gaas:As)
- Alan C. Warren
- J.H. Burroughes
- et al.
- 1991
- IEEE Electron Device Letters
InAs bipolar transistors: A path to high-performance cryogenic electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- Device Research Conference 1993
Surface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicists
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Optoelectronic applications of GaAs epilayers containing arsenic precipitates
- Alan C. Warren
- J. Woodall
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Low-temperature grown III-V materials
- M.R. Melloch
- J. Woodall
- et al.
- 1995
- Annual Review of Materials Science
Thermal velocity limits to diffusive electron transport in thin-base np+n GaAs bipolar transistors
- E.S. Harmon
- M.R. Melloch
- et al.
- 1994
- Applied Physics Letters
GaAs, AlGaAs, and InGaAs epilayers containing As clusters: Semimetal/semiconductor composites
- M.R. Melloch
- J. Woodall
- et al.
- 1993
- Materials Science and Engineering B
Enhanced electro-optic properties of low-temperature-growth GaAs and AlGaAs
- D.D. Nolte
- M.R. Melloch
- et al.
- 1993
- Applied Physics Letters