Conference paper
Characterization of a next generation step-and-scan system
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We consider the Boltzmann equation describing the charge transport in semiconductor devices, including the scattering of electrons with acoustic and optical phonons. Taking into account that at a high electric field the scattering events are nearly elastic, we develop a formal expansion for the distribution function valid for general band structures. © 1992.
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SPIE Advanced Lithography 1998
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