PaperLateral down-scaling of selective area MOVPE-grown GaInAs/InP wires and dotsH. Rothuizen, P. Roentgen, et al.Microelectronic Engineering
PaperFabrication and Optical Characterisation of First Order DFB GaInP/AlGaInP Laser Structures at 639 nmM. Korn, T. Körfer, et al.Electronics Letters
Conference paperThreshold power reduction of GaAs-AlGaAs ridge SQW-GRINSCH laser diodes through photon-recyclingY. Gigase, C. Harder, et al.ISLC 1990
PaperSelective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substratesY.D. Galeuchet, P. RoentgenJournal of Crystal Growth
