A DC-to-44-GHz 19dB gain amplifier in 90nm CMOS using capacitive bandwidth enhancement
- Jonas R. M. Weiss
- Marcel A. Kossel
- et al.
- 2006
- ISSCC 2006
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23 results for H. Jaeckel
Scaled GaAs MESFET's with gate length down to 100 nm
- Heinz Jaeckel
- Volker Graf
- et al.
- 1986
- IEEE Electron Device Letters
Design and phase noise analysis of a multiphase 6 to 11 GHz PLL
- George Von Bueren
- David Barras
- et al.
- 2009
- ESSCIRC 2009
A wideband 0 to 60 dB CMOS variable gain amplifier for IR-UWB I/Q receivers
- David Barras
- Heinz Jaeckel
- et al.
- 2009
- ESSCIRC 2009
A multi-modulation low-power FCC/EC-compliant IR-UWB RF transmitter in 0.18-μm CMOS
- David Barras
- George Von Bueren
- et al.
- 2009
- RFIC 2009
5.75 to 44Gb/s quarter rate CDR with data rate selection in 90nm bulk CMOS
- George Von Bueren
- Lucio Rodoni
- et al.
- 2008
- ESSCIRC 2008
A 40-Gb/s, digitally programmable peaking limiting amplifier with 20-dB differential Gain in 90-nm CMOS
- Jonas R. M. Weiss
- Martin L. Schmatz
- et al.
- 2006
- RFIC 2006
Effect of body contacts on high-speed circuits in 90 nm CMOS SOI technology
- Jonas R. M. Weiss
- Christian Menolfi
- et al.
- 2005
- ISSCS 2005
Wavelength tuning in high power InGaAs/AlGaAs lasers grown on nonplanar substrates
- L. Brovelli
- D.J. Arent
- et al.
- 1990
- ISLC 1990
High quality index guided ridge AlGaInP/GaInP visible lasers
- G.L. Bona
- P. Roentgen
- et al.
- 1990
- ISLC 1990