Conference paper
Studies of EELS L2,3 absorption fine structure in thin silicon
P.E. Batson
Microscopy of Semiconducting Materials 1991
In principle, Electron Energy-Loss Spectroscopy in the Scanning Transmission Electron Microscope can obtain information related to the electronic structure of single defect structures in semiconductors. The instrumental requirements necessary to accomplish this are discussed. Examples include: Si and GaAs interband excitations, graphite EXELFS analysis, and surface and defect induced structure at the SiL2,3 edge. © 1989.
P.E. Batson
Microscopy of Semiconducting Materials 1991
P.E. Batson
Ultramicroscopy
S. Guha, V.K. Paruchuri, et al.
Applied Physics Letters
P.E. Batson, M.F. Chisholm
Journal of Electron Microscopy Technique