Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A review of hopping conduction in small MOSFET devices at low temperatures is given. The theoretical predictions of Mott, extended to the quasi-one-dimensional limit, will be compared with experiments and it will be shown that in the limit where only a few states exist within a few kBT of the Fermi energy the conduction properties take on a radically different form. Experimental results will be compared to both fluctuation hopping dominated theories as well as resonant tunneling models. © 1986.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Lawrence Suchow, Norman R. Stemple
JES
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings