A. Gangulee, F.M. D'Heurle
Thin Solid Films
Paper
Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface
Abstract
Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO2-interface during high-field current stress using a hot-electron-induced hydrogen-release model. © 1993.
Related
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films