C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Paper
Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface
Abstract
Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO2-interface during high-field current stress using a hot-electron-induced hydrogen-release model. © 1993.
Related
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Conference paper
True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Julien Autebert, Aditya Kashyap, et al.
Langmuir