G.W. Rubloff, R.M. Tromp, et al.
Applied Physics Letters
We have developed an electron lithography method, hot electron emission lithography, which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design and fabrication of the patterned electron emitting mask made by standard metal-oxide-semiconductor technology will be discussed, and its applicability in a simple 1:1 e-beam stepper will be demonstrated. Patterns with a minimum feature size of 160 nm have been printed successfully. Further improvements in resolution to 50 nm appear to be possible. © 1998 American Institute of Physics.
G.W. Rubloff, R.M. Tromp, et al.
Applied Physics Letters
E.A. Stach, R. Hull, et al.
Journal of Applied Physics
Y.-H. Kim, C. Cabral Jr., et al.
IEDM 2005
E. Cartier, F.R. McFeely
Physical Review B