M. Liehr, S. Gates, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We have studied the D2 desorption and NH3 adsorption on polycrystalline GaN surfaces using time-of-flight detection of recoiled H+ and D+ ions. Two surface deuterium states characterized by different thermal stability are identified. Rate abalysis for isothermal D2 desorption is performed near 250°C, which we attribute to desorption from Ga sites. We assign the higher temperature D2 desorption state decomposing near 500°C to desorption from N sites. Both clean and D-terminated GaN surfaces are quite reactive towards NH3 adsorption. We observed that H D exchange during NH3 exposure occurs rapidly at room temperature. © 1995.
M. Liehr, S. Gates, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
N. Inoue, F. Ito, et al.
IITC 2013
D.D. Koleske, S. Gates, et al.
The Journal of Chemical Physics
J.B. Miller, H.R. Siddiqui, et al.
The Journal of Chemical Physics