PaperPhotoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxyE. Mendez, M. Heiblum, et al.Journal of Applied Physics
PaperUse of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V sT. Sajoto, M. Santos, et al.Applied Physics Letters
PaperOrigin of the nonexponential thermal emission kinetics of DX centers in GaAlAsE. Calleja, P.M. Mooney, et al.Applied Physics Letters
PaperEnergy band discontinuities in heterojunctions measured by internal photoemissionM. Heiblum, M.I. Nathan, et al.Applied Physics Letters