Gate oxide reliability for nano-scale CMOS
J.H. Stathis
MIEL 2006
Hot electrons in the gate dielectric (SiO2) of field effect transistors create defects at the Si/SiO2 interface. Using electrically detected magnetic resonance, we have identified a major component of these interface defects as the well-known Pb0 center. We show that the generation rate of the Pb0 centers increases when the oxide field is sufficient to cause electron heating, thus establishing the correlation with hot-electron generated interface states. Hot-electron induced defect generation is shown to be fundamentally different from another interface degradation mechanism, electron-hole recombination near the interface, which produces interface defects but does not produce Pb0 centers.
J.H. Stathis
MIEL 2006
B.P. Linder, J.H. Stathis, et al.
IRPS 2001
E. Cartier, J.H. Stathis
Applied Physics Letters
J.H. Stathis, J. Chapple-Sokol, et al.
Applied Physics Letters