Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Strain-relaxed Si1-xGex films have been investigated using X-ray microdiffraction with a diffracted beam footprint of 0.3 μm×2 μm. Intensity variations in the diffracted beam at different positions on the sample are due to the presence of local tilted regions which are larger in area than the diffracted X-ray beam. These regions are shown to have the same lattice parameter but different orientation with respect to the Si substrate. These regions arise from dislocation pileups, which consist of a larger number of dislocations when larger mismatch strain is relieved.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
E. Burstein
Ferroelectrics
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry