Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Strain-relaxed Si1-xGex films have been investigated using X-ray microdiffraction with a diffracted beam footprint of 0.3 μm×2 μm. Intensity variations in the diffracted beam at different positions on the sample are due to the presence of local tilted regions which are larger in area than the diffracted X-ray beam. These regions are shown to have the same lattice parameter but different orientation with respect to the Si substrate. These regions arise from dislocation pileups, which consist of a larger number of dislocations when larger mismatch strain is relieved.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
R.W. Gammon, E. Courtens, et al.
Physical Review B
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
R. Ghez, J.S. Lew
Journal of Crystal Growth