Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
First-principles electronic structure calculations and multiple-angle valence-band photoelectron spectroscopy were combined to image a clean surface-related electronic state of the Cu(001) surface. The surface band cresting at 4.30 eV below the Fermi level was computed to have a density of states at the lower end of the bulk Cu d bands. Based on the results of first-principles calculations for the clean and Cl-covered surfaces, we were able to successfully measure the surface state by taking a ratio of clean versus Cl-covered isoenergetic valence electron angular distributions. We have also carried out first-principles total-energy calculations for the multilayer atomic relaxation of the clean Cu(001) surface, and found that the topmost interlayer separation contracts by 2.9% relative to the bulk value, while the second interlayer is essentially unchanged and the third interlayer contracts by only 0.1%. © 1996 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Julien Autebert, Aditya Kashyap, et al.
Langmuir