Lynne Gignac, John Bruley, et al.
AReMS 2025
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic fields and the typical magnitudes of magnetic fields are given.
Lynne Gignac, John Bruley, et al.
AReMS 2025
Kamal Sikka, Ravi Bonam, et al.
ECTC 2021
Chris Bottoms, Rick Johnson, et al.
SPIE Advanced Lithography + Patterning 2025
Alma Vela Ramirez, Sankar Sankarapandian, et al.
ASMC 2024