Giacomo Graziano, Alberto Ferraris, et al.
IEEE T-ED
Paper
Impact of External Magnetic Fields on STT-MRAM: An Application Note
Abstract
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic fields and the typical magnitudes of magnetic fields are given.
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