Steven Hung, Shogo Mochizuki, et al.
VLSI Technology and Circuits 2025
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic fields and the typical magnitudes of magnetic fields are given.
Steven Hung, Shogo Mochizuki, et al.
VLSI Technology and Circuits 2025
Giulia Prone, Dominik Scherrer, et al.
Swiss Phot. Ind. Symp. on Phot. Sens. 2024
Chris Penny
VLSI Technology 2023
Max Bloomfield, Amogh Wasti, et al.
ITherm 2025